From 2D-Planar to 3D- Non-Planar Device Architecture: A Scalable Path Forward? (Invited Paper)

摘要

The microelectronics industry is in the process of transitioning from 2D-planar devices to 3D-non-planar (FinFET). In this paper, a metric is developed to assess the impact of scaling and device performance on chip (circuit) power as it is migrated node-to-node. The impact of node migration is assessed at product level as it is moved from 32 nm (2D-planar) to 22 nm (3D-non-planar device). Some of the limitations of the existing 22 nm 3D-device is reviewed that may explain some of the short comings in the product performance. Going forward it is critical that in two areas the FinFET needs to be improved: Multi-V_T implementation and move away from the tapered fin shape.