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Low voltage high linearity CMOS up-conversion mixer for LTE applications

机译:用于LTE应用的低压高线性度CMOS上变频混频器

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The purpose of this study was to fabricate a mixer based on the Gilbert cell mixer using the 0.18 µm 1P6M standard CMOS process. The primary target of this mixer was long-term evolution (LTE) small-cell base stations; thus, high linearity was essential. This up-conversion mixer can convert a 100-MHz intermediate frequency into a higher 1.8-GHz radio frequency for wireless applications. A high-linearity mixer was achieved by employing the derivative superposition (DS) method and a source degeneration resistor, while using a folded mixer to achieve low voltages. The post-layout simulation result was a conversion gain of 5 dB, an input third-order intercept point (IIP3) of 14.6 dBm, supply voltage of 1.2 V, and a power consumption of 9.54 mW.
机译:这项研究的目的是使用0.18 µm 1P6M标准CMOS工艺制造基于吉尔伯特单元混合器的混合器。该混频器的主要目标是长期演进(LTE)小小区基站。因此,高线性度至关​​重要。这种上变频混频器可以将100 MHz的中频转换为更高的1.8 GHz射频,以用于无线应用。通过使用微分叠加(DS)方法和源极负反馈电阻器来实现高线性度的混频器,同时使用折叠式混频器来实现低电压。布局后的仿真结果是转换增益为5 dB,输入三阶交调点(IIP3)为14.6 dBm,电源电压为1.2 V,功耗为9.54 mW。

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