A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge

摘要

To reduce TSV coupling noise, a new guard-ring technique is proposed and implemented experimentally. We design the n+− well guard-ring butted to the TSV dielectric surrounding the TSV and utilize the inversion layer induced by a positive interface charge as a shield layer. The interface trap density responsible for the interface charge between the TSV dielectric and Si substrate was extracted. Proposed technique reduces the coupling noise by ∼3 times.