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A 350mV Complementary 4-5 GHz VCO based on a 4-Port Transformer Resonator with 195.8dBc/Hz Peak FOM in 22nm FDSOI

机译:基于4端口变压器谐振器的350mV互补4-5 GHz VCO,22nm FDSOI中的195.8DBC / Hz峰值FOM

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This paper presents an ultra-low voltage and power complementary VCO topology based on a 4-port transformer resonator. The design benefits from the high current efficiency of a CMOS topology and the low phase noise and supply voltage of the NMOS/PMOS-only structure without sacrificing reliability. A 4-port transformer resonator is used to provide two differential-mode (DM) and two common-mode (CM) harmonic impedances for lower phase noise, voltage supply, and sensitivity to CM tuning. The CMOS VCO is implemented in 22nm FDSOI with a core area of 0.19 mm2. The VCO dissipates <; 0.45mW from 350mV supply while achieving a peak figure-of-merit (FOM) of 192-195.8 dBc/Hz across the 20% continuous tuning range of 4.06-to-4.96 GHz. To the authors knowledge, the 4-port resonator-based CMOS VCO has the highest reported FOM for oscillators with sub-0.5mW power consumption and the lowest supply voltage (350mV) for complementary designs.
机译:本文介绍了基于4端口变压器谐振器的超低电压和功率互补VCO拓扑。该设计从CMOS拓扑的高电流效率和NMOS / PMOS-PMOS结构的低相位噪声和电源电压而没有牺牲可靠性。 4端口变压器谐振器用于提供两个差动模式(DM)和两个共模(CM)谐波阻抗,用于降低相位噪声,电源和对CM调谐的敏感性。 CMOS VCO在22nm FDSOI中实现,核心面积为0.19毫米 2 。 VCO消散<;从350mV供电0.45mW,同时在20%持续调谐范围为4.06至4.96 GHz的20%连续调谐范围内实现192-195.8 DBC / HZ的峰值峰值(FOM)。为了提交人的知识,基于4端口谐振器的CMOS VCO具有最高报告的振荡器的FOM,具有子0.5MW功耗和用于互补设计的最低电源电压(350mV)。

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