首页> 外文会议>IEEE Radio Frequency Integrated Circuits Symposium >A 350mV Complementary 4-5 GHz VCO based on a 4-Port Transformer Resonator with 195.8dBc/Hz Peak FOM in 22nm FDSOI
【24h】

A 350mV Complementary 4-5 GHz VCO based on a 4-Port Transformer Resonator with 195.8dBc/Hz Peak FOM in 22nm FDSOI

机译:基于22nm FDSOI中具有195.8dBc / Hz峰值FOM的4端口变压器谐振器的350mV互补4-5 GHz VCO

获取原文

摘要

This paper presents an ultra-low voltage and power complementary VCO topology based on a 4-port transformer resonator. The design benefits from the high current efficiency of a CMOS topology and the low phase noise and supply voltage of the NMOS/PMOS-only structure without sacrificing reliability. A 4-port transformer resonator is used to provide two differential-mode (DM) and two common-mode (CM) harmonic impedances for lower phase noise, voltage supply, and sensitivity to CM tuning. The CMOS VCO is implemented in 22nm FDSOI with a core area of 0.19 mm2. The VCO dissipates <; 0.45mW from 350mV supply while achieving a peak figure-of-merit (FOM) of 192-195.8 dBc/Hz across the 20% continuous tuning range of 4.06-to-4.96 GHz. To the authors knowledge, the 4-port resonator-based CMOS VCO has the highest reported FOM for oscillators with sub-0.5mW power consumption and the lowest supply voltage (350mV) for complementary designs.
机译:本文提出了一种基于4端口变压器谐振器的超低电压和功率互补VCO拓扑。该设计得益于CMOS拓扑的高电流效率以及仅NMOS / PMOS结构的低相位噪声和电源电压,而不会牺牲可靠性。 4端口变压器谐振器用于提供两个差模(DM)和两个共模(CM)谐波阻抗,以降低相位噪声,电压供应和对CM调谐的灵敏度。 CMOS VCO在22nm FDSOI中实现,核心面积为0.19 mm 2 。 VCO消散<;从350mV电源提供0.45mW的功率,同时在4.06至4.96 GHz的20%连续调谐范围内实现192-195.8 dBc / Hz的峰值品质因数(FOM)。据作者所知,基于4端口谐振器的CMOS VCO具有低于0.5mW功耗的振荡器报告的FOM最高,而针对互补设计的最低电源电压(350mV)。

著录项

相似文献

  • 外文文献
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号