A Compact E-Band PA with 22.37 PAE 14.29 dBm Output Power and 26 dB Power Gain with Efficiency Enhancement at Power Back-off

摘要

This paper presents a compact power amplifier (PA) with efficiency enhancement technique at power back-off region in 65-nm CMOS technology for E-band applications. Cross-coupled transistor pair, generating negative impedance is introduced to enhance power back-off efficiency and small signal power gain. Neutralization and transformer-based matching networks are employed to improve gain and stability. The measured P_sat, OP_1dB and peak PAE are 14.29 dBm, 12.03 dBm and 22.37%, respectively. A 26 dB power gain with 3 dB bandwidth of 5 GHz is achieved. The measured peak gain varies from 26 dB to 31 dB and the P_1dB power added efficiency increases from 6% to 13.3% by adjusting the control voltages of cross-coupled transistor pair. Compact layout of the PA yields a core area of 0.025 mm^{2, and the total DC power consumption is 120 mW, enabling compact and efficient integration into phased array transceivers.}