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A family of monolithic inductor-varactor SiGe-HBT VCOs for 20 GHz to 30 GHz LMDS and fiber-optic receiver applications

机译:用于20 GHz到30 GHz LMD和光纤接收器应用的一家单片电感器 - 变老型SiGe-HBT VCOS

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A family of low-phase noise, monolithic inductor-varactor SiGe-HBT VCOs in the 20 GHz to 30 GHz band was fabricated in a production SiGe technology. The unbuffered differential VCOs have 10-15% tuning range and deliver -3 to 2 dBm directly into each of the 50 /spl Omega/ loads, and 0 dBm differentially. Phase noise is as low as -101 dBc/Hz at 1 MHz from the 20 GHz carrier and -87 dBc/Hz at 100 kHz from the 26 GHz carrier. The VCO core draws 10 mA from a 5 V supply.
机译:在20GHz至30 GHz带中的一系列低相噪声,单片电感器 - 变弧菌SiGe-HBT VCO在生产SiGe技术中制造。无缓冲的差分VCO具有10-15%的调谐范围,并直接将-3到2 dBm递送到50 / SPL omega /载荷中的每一个,0 dBm差别。相位噪声从20GHz载波的20GHz载波和来自26GHz载体的100kHz的-87dBC / Hz低至-101dBc / Hz。 VCO核心从5 V电源抽取10 mA。

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