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305-325 GHz Non-Reciprocal Isolator Based on Peak-Control Gain-boosting Magnetless Non-reciprocal Metamaterials

机译:305-325 GHz非互相隔离器,基于峰值控制增益磁磁性非互惠超材料

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Terahertz (THz) non-reciprocal components such as circulators, isolators, filters, and gyrators are anticipated to play vital roles in THz system. However, to the best of our knowledge, silicon-based THz non-reciprocal components have not been reported. This paper presents the first silicon-based THz magnetic-free non-reciprocal isolator in SiGe BiCMOS process $(f_{T}/fmax=mathrm{300}/mathrm{450} ext{GHz})$, covering 305–325 GHz. Peak-control gain-boosting technique is utilized to push the operating frequency of the magnetless non-reciprocal metamaterials (MNMs) to THz spectrum. By cascading three MNMs operating at different frequencies, a wideband non-reciprocal isolator is achieved. It exhibits 3.6 dB loss (with pad) and 15.3 dB isolation while consuming 3.52 mW (1.17 mW/unit) from 0.88-V supply.
机译:诸如循环器,隔离器,过滤器和陀螺等诸如循环器,隔离器,过滤器和振动器的无互互互易核组件,以在THz系统中发挥重要作用。 然而,据我们所知,尚未报告基于硅的THz非互易组件。 本文介绍了SiGe BICMOS工艺中的第一种基于硅的THz无磁性非互易分离器 $(f_ {t} / fmax = mathrm {300} / mathrm {450} text {ghz})$ ,涵盖305-325 GHz。 利用峰控制增益升压技术将磁性非互易式超材料(MNMS)的工作频率推向THz频谱。 通过在不同频率下运行的三个MNMS级联,实现了宽带非互动隔离器。 它表现出3.6 dB损耗(带垫)和15.3dB隔离,同时消耗3.52 MW(1.17 MW /单位),从0.88V供电。

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