Effective channel length of MOSFET with halo

摘要

The dependences of the effective channel length on the gate voltage for MOSFETs with halo are extracted, and their average behaviors are studied. It is found that they provide the important information about not only the channel structure, but also the effects of the gate voltage and the substrate voltage on the channel, which are helpful for both technology and design engineers to get the common interpretation of “channel length”.