A dual-band balun LNA resilient to 5–6 GHz WLAN blockers for IR-UWB in 65nm CMOS

摘要

In this paper a dual band balun low-noise-amplifier (LNA) for impulse-radio ultra wide band (IR-UWB) applications is proposed. It exploits a common-gate (CG) stage in parallel to a common-source (CS) featuring 18 dB maximum gain, <4 dB noise figure and 4 dBm in-band third-order intermodulation intercept (IIP3). A double-peak single notch input network with a dual-band LC load is used for input matching and for WLAN (5–6 GHz) out-of-band interferers suppression, resulting in 16 out-of-band IIP3. This allows to remove the 5–6GHz WLAN dedicated filtering at the antenna reducing costs. The dual-band balun-LNA has been designed in 65nm CMOS technology, 1.2V supply and 9mA current consumption.