The reliability of CAD is dependent on the accuracy of models implemented into circuit simulators. However, precise models such as based on 2D numerical modeling are time consuming. Therefore, simplified analytical models have been developed and widely used. A problem is that such existing models are not valid for advanced MOSFETs with sub-micron channel length due to applied simplifications. By introducing fitting parameters to describe each additional short-channel phenomenon, the consistency of the models is violated. As a result the calculation time for circuit simulation increases considerably. In this paper the authors present a newly developed MOSFET model which describes the transistor characteristics consistently without any nonphysical fitting parameters. Using this model the calculation time is reduced in comparison with the conventional model due to the consistent inclusion of short-channel effects and the diffusion contribution to the carrier transport.
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