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EMI common-mode (CM) noise suppression from self-calibration of high-speed SST driver using on-chip process monitoring circuit

机译:EMI共模(CM)噪声抑制来自芯片过程监控电路的高速SST驱动器的自校准

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This paper presents a CM noise suppression technique from self-calibration of a 20-Gb/s source-series terminated (SST) driver using an on-chip process monitoring circuit designed and simulated in a 65-nm CMOS process. An unbalanced charging and discharging loop results in an asymmetric rise and fall time of the output signal and is an intrinsic source of the CM noise. For an SST driver, the CM noise effect is especially aggravated under process corner variations due to push-pull NMOS configuration. The on-chip sensor circuit monitors and detects all possible process corners over the entire temperature range. The control circuit operates to self-calibrate the output driver to compensate for the process corner variations and results in a 15% higher symmetric rise and fall time of the output signal for the worst case scenario. The simulation results indicate that the proposed technique reduces the peak CM noise by 7.2× (-86%) without power overhead, as it is a background monitoring and self-calibration scheme.
机译:本文使用在65-NM CMOS工艺中设计和模拟的片上处理监控电路,介绍了一种来自20-GB / S源系列终端(SST)驱动器的自校准的CM噪声抑制技术。不平衡充电和放电环路导致输出信号的不对称上升和下降时间,并且是CM噪声的固有源。对于SST驱动器,由于推挽NMOS配置,在处理拐角变化下特别加重CM噪声效果。片上传感器电路监控并检测整个温度范围内的所有可能的过程角。控制电路操作以自校准输出驱动器以补偿过程角变化,并导致最坏情况场景的输出信号的对称上升和下降时间增加15%。仿真结果表明,该技术将峰值CM噪声降低7.2×(-86%)而无电源开销,因为它是背景监测和自校准方案。

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