HIGH GAIN GaAs lOGbps TRANSIMPEDANCE AMPLIFIER WITH INTEGRATED BONDWIRE EFFECTS

摘要

This paper outlines the design and performance of a GaAs MESFET MMIC front-end receiver circuit. Its main characteristics are a 17GHz bandwidth, 62dBΩ gain and 10.3pA/√Hz input referred noise. Input sensitivity is -21dBm with a good linear response which extends to -3dBm. Tolerance to high input capacitance assures lOGbps operation with input capacitance exceeding 260fF. Total power dissipated by the circuit is 280mW. The design approach focused' on the effect of bond-wire inductance and its impact on manufacturing reliability. Special attention was given to noise analysis and optimisation, stability requirements, output impedance. matching and layout. On-wafer characterization of this circuit shows good yield with high similarity among the results of different chips. Measured results for a bonded. chip in a metal case agree well with simulation results, confirming the validity of the simulation models, the quality of the UMS PH15 process technology and of the proposed design.