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A direct-capacitive feedback ISFET interface for pH reaction monitoring

机译:直接电容反馈ISFET接口用于pH反应监测

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In this paper we propose a low-power, compact ISFET interface capable of overcoming problems of DC offset due to trapped charge and transcoductance reduction due to capacitive division, which commonly exist with implementation in CMOS. Through direct feedback to the floating gate and a low-leakage switching scheme, all the unwanted factors are eliminated while the output is capable of tracking a pH reaction which occurs at the sensing surface. The circuit has been designed to be an inherently constant-voltage-constant-current structure, avoiding any loss of sensitivity due to capacitive division. Additionally, a tradeoff between noise and stability is presented for optimum choice of capacitors. The proposed ISFET and interface has been designed in a typical 0.35um process, has an area 60 ×70um2 and consumes 231nW of power, which facilitates it's implementation for large chemical sensing arrays.
机译:在本文中,我们提出了一种低功耗,紧凑的ISFET接口,该接口能够克服由于俘获电荷而导致的DC偏移问题以及由于电容性分配而导致的跨导减小的问题,这在CMOS实施中通常存在。通过对浮栅的直接反馈和低泄漏切换方案,消除了所有不想要的因素,同时输出能够跟踪在传感表面发生的pH反应。该电路已被设计为固有的恒压恒流结构,避免了由于电容分压导致的灵敏度损失。另外,提出了噪声与稳定性之间的折衷方案,以优化电容器的选择。拟议中的ISFET和接口采用典型的0.35um工艺设计,面积为60×70um 2 ,功耗为231nW,这有助于其在大型化学传感阵列中的实现。

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