Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study

摘要

600 V MOSFETs were fabricated on 6-inch 4H-SiC substrates. Channel lengths and JFET widths were varied to study their impact on the on-state performances and blocking behaviors. Based on physical cross-sectional SEM analyses of fabricated 600 V MOSFETs, new structures were proposed to further improve the static and short circuit performances. Both static and non-isothermal, mixed-mode simulations were conducted to support the novelty of the proposed structures.