Reliability Enhancement of SoCs Based on Dynamic Memory Access Profiling in Conjunction with PVT Monitoring

摘要

The growing technology scaling and larger die size of multi-processor System-On-Chip have increased the error rates for on-chip memories. Increased system speed for high performance, aggressive voltages scaling for power reduction and intra-die process variation have exaggerated the unreliability issue. In this paper a method for memory management on SoCs to enhance their reliability is discussed. The method consists of a mechanism for automatically moving the contents of a less reliable memory to a more reliable memory. The solution module designed as RAIMM (Reliability Aware Intelligent Memory Management) is an architectural framework to dynamically compute reliability of the on-chip memories and provide a better reliable solution for the application in case of any memory failure. The silicon characterization data is used in conjunction with the on-chip process/voltage/temperature sensors to correctly estimate the memory reliability status. It provides a ranking mechanism for the available memories based on the operating conditions, silicon characterization data as well as dynamic access profiling data, which can be used to provide a method to accurately predict memory failure in advance to the application. An efficiently hardware programmed Direct Memory Access (DMA) engine ensures the efficient working of overall application with low overhead for software in maintaining the memory configuration and contents.