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Effect of Ar/O2 Ratio and Substrate Temperature on the Hydrophilicity of SiO2Thin Films Prepared by RF Reactive Magnetron Sputtering

机译:Ar / O2比和衬底温度对RF反应磁控溅射制备SiO2薄膜亲水性的影响

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SiO2 thin films were prepared on stainless steel substrate by RF reactive magnetron sputtering. Their microscopic surface morphology was characterized by atomic force microscope (AFM) and static contact Angle (SCA) was applied to evaluate hydrophilicity of films. It was found that SiO2 thin films showed super hydrophilicity which could last long at Ar/O2 ratio of 6:4; under such condition, substrate temperature also affects hydrophilicity of films, the best of which can be obtained at 90 °C.
机译:通过射频反应磁控溅射在不锈钢基板上制备了SiO2薄膜。用原子力显微镜(AFM)表征了它们的微观表面形态,并用静态接触角(SCA)评估了薄膜的亲水性。发现SiO2薄膜表现出超强的亲水性,在Ar / O2比为6:4时可以持续很长时间。在这种条件下,基材温度也会影响薄膜的亲水性,最好在90°C的温度下获得。

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