Gas Phase Phosphorus Heavily-doped FZ Silicon Thermal Field Design and Growth Method

摘要

This paper introduces the fabrication method of a kind of gas phase phosphorus heavily-doped float zone (FZ) silicon,including thermal field design (electromagnetic copper coil with double water cooling system).This method solves the problems during the pulling process of heavily-doped FZ silicon crystal of phosphorus doped.The gas phase phosphorus heavily-doped FZ silicon crystal using this methods with low oxygen content (less than 0.2ppma),low radial resistivity variation (less than 10％),low resistivity (the minimum of 0.002 ohm.cm),and is good to meet the transient voltage suppressor (TVS) for silicon substrate material requirements.