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AFORS-HET simulation study of HIT solar cells: Significance of inversion layer

机译:HET-HET模拟击中太阳能电池的模拟研究:反转层的意义

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The energy band diagram of the HIT solar cell obtained using AFORS-HET simulations reveals that a p-type inversion layer is induced in the n-type c-Si near the front hetero-interface. The HIT solar cell actually behaves like a "pseudo" p-n homojunction solar cell, in which the p-type inversion layer acts as the cell emitter and controls the performance of the solar cell. The formation of the inversion layer is controlled by the Fermi level of the p-Si:H layer, which is adjustable by varying its doping level. The study also suggests that the work function of the front TCO layer should be keep as high as possible for achieving high conversion efficiency.
机译:使用前述-HET模拟获得的受到光太阳能电池的能带图显示,在前杂界面附近的N型C-Si中诱导p型反转层。 HIT太阳能电池实际上表现类似于“伪”P-N同性带太阳能电池,其中P型反转层用作电池发射器并控制太阳能电池的性能。反转层的形成由P-Si:H层的费米水平控制,其通过改变其掺杂水平来调节。该研究还表明,前TCO层的功函数应该保持高度,以实现高转换效率。

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