Contact Resistance Study in MOCVD TiN Process

摘要

ILB (Integration liner barrier) is the combination of IMP (Ionic Metal Plasma) Ti and MOCVD (Metal-Organic-Chemical-Vapor-Deposition) TiN, which is widely employed in semiconductor manufacturing as a tungsten glue/barrier layer. Contact resistance is the parameter to measure the performance of ILB and the W process. The TiN process plays a very important role in the performance of contact resistance. In previous studies, process temperature and RF power treatment post process was shown to influence contact resistance directly (1,2). In this paper, the influence of chamber condition before processing was studied, then some index is given to monitor these phenomena and prevent contact resistance fail.