A New SRAM Cell Using the Optimized PNPN Diode

摘要

A new SRAM structure using 2-port PNPN diodes as memory cells is proposed in this article. The electrical characteristics of this memory cell is analyzed and then optimized to meet design requirements. Device fabrication using a simple process flow is conducted. The experimental result and further mixed-mode simulations proved that this diode is feasible for SRAM circuit in advanced VLSI applications.