Ka-band low noise amplifier using 70nm mHEMT process for wideband communication

摘要

The paper proposes a Ka band low noise amplifier (LNA) using 70nm GaAs metamorphic high electron mobility transistor (mHEMT). An ultra low noise three stage amplifier demonstrated an average noise figure of 1.1dB between 24GHz and 30GHz, an average small signal power gain of 27dB, a compact chip area of 1.5mm2 (with dicing streets) and a power consumption of around 80mW@1.5V power supply. The LNA features broad bandwidth, relatively high gain, low noise figure and compact size, and will be further used in broadband receivers for communications.