Measurement of direct current and high frequency electrical characteristics for Through-Silicon-Via

摘要

In order to extract the electrical characteristics of Through-Silicon-Via (TSV) accurately, the methodologies are proposed based on three-dimensional (3D) full-wave simulations, which include both DC and high frequency measurement structures. The DC measurement uses Kelvin structure and the sources of error are discussed. The high frequency measurement structures are designed based on GSG format microwave probes. The Open-Short-Through de-embedding procedure is illustrated and the results are compared, thereafter the R-L-C lumped model is extracted from these results.