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The comprehensive solution of Ultra Top Metal stress impact on Seal Ring

机译:超顶金属应力撞击对密封圈的综合解

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In recent years, the development of integrated circuit technology has been changed with each passing day. With the continuous reduction of devices feature size, the integration and performance of circuits have been continuously improved, and the serious challenges in reliability have also been increasing. In this paper, the influence of ultra top metal(UTM) layer stress on different searing ring structures was systematically studied based on the failure of terminal chip. The results showed that the stress of the ultra top metal layer was greater than that of the thin top metal layer. The serious stress from top metal had great influence on single slot searing ring structure. In this paper, the crack defect fail was solved completely through the increasing via dot density in searing ring structure
机译:近年来,每次过去一天都有改变了集成电路技术的发展。 随着器件特征尺寸的连续减少,电路的集成和性能已经不断提高,可靠性的严重挑战也在增加。 本文基于终端芯片的故障,系统地研究了超顶金属(UTM)层应力对不同灼热环结构的影响。 结果表明,超顶金属层的应力大于薄顶部金属层的应力。 顶级金属的严重压力对单槽灼热环结构有很大影响。 在本文中,通过在灼热环结构中的点密度的增加来完全通过增加裂缝缺陷失败

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