首页> 外文会议>Progress in electromagnetics research symposium >Design of K-band CMOS Frequency Divider Integrating a Marchand-type Transformer
【24h】

Design of K-band CMOS Frequency Divider Integrating a Marchand-type Transformer

机译:K频段CMOS分频器的设计集成Marchand型变压器

获取原文
获取外文期刊封面目录资料

摘要

In this paper, a design of K-band frequency divider integrating a Marchand-type transformer based on 0.18-u.m RF CMOS process is presented. The edge-coupled transformer is used to characterize and to provide differential signals for the CML frequency divider. The amplitude imbalance between S21 and S31 of the transformer is negligible below 35 GHz, and the phase imbalances are within 2° from 5 GHz to 33 GHz. Moreover, the insertion losses of the transformer are less than 6 dB from 21 GHz to 34 GHz. The 16 : 1 frequency divider formed by four 2 : 1 CML stages works correctly at entire K band with a total power consumption of 25 mW.
机译:本文介绍了基于0.18-U.m rf CMOS工艺的基于0.18-u.m rf CMOS过程的Marchand型变压器的K波段分频器的设计。边缘耦合变压器用于表征和为CML分频器提供差分信号。变压器的S21和S31之间的幅度不平衡可忽略不计,低于35GHz,相位不平衡在2°内,从5GHz到33 GHz。此外,变压器的插入损耗从21 GHz到34 GHz的距离小于6 dB。通过四个2:1 CML级形成的16:1分频器在整个K条带中正常工作,总功耗为25 MW。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号