A Concurrent Triple-band CMOS LNA Design for 4G Applications

摘要

In this paper, a concurrent triple-band low noise amplifier (LNA), which operates at 698MHz-800MHz 1920 MHz-2170 MHz and 2300 MHz-2400 MHz is designed for Long Term Evolution (LTE) , WCDMA/HSDPA and WiBro services. The circuit is designed with TSMC 0.18 urn RF CMOS process. The main topology of the proposed LNA is cascode architecture with source degeneration. In order to obtain necessary gains for this frequency bands, a series LC circuit is added in parallel with the parallel LC tank of a single-band LNA. The proposed LNA has voltage gains of 17.9 dB and 18.7 dB, and noise figures (NF) of 2.3 dB and 3.1 dB at 749 MHz and 2160 MHz, respectively while dissipating 7 mA from a 1.8 V supply voltage.