Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials

摘要

BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1–3] are shown to scale to the <30nm CDs and <12nm thicknesses found in advanced technology nodes. Switching speeds at the high (>100uA) currents of NVM writes can reach 15ns; NVM reads at typical (∼5uA) current levels can be ≪1usec.