Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers

摘要

We propose a new noise source device utilizing narrow-channel-MOSFET having Si multi-dots to realize high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate 25 kbits/s using the Si dot MOSFET. We also present a guideline to design Si dot MOSFET for increasing generation rate.