Narrow-channel-MOSFET having Si-dots for high-rate generation of random numbers

摘要

We propose a new noise source device utilizing a narrow-channel-MOSFET having Si multi-dots to realize the high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate of 25 kbits/s using the Si dot MOSFET. We also present a guideline for designing Si dot MOSFETs for increased generation rate.