Ultra-High Endurance and Low Ioff Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory: IBM/Macronix PCRAM Joint Project

摘要

New selector materials with very-low I_(OFF) and optimum V_(th) based on As-Se-Ge chalcogenides are studied. An optimized composition is proposed, which achieves a good trade-off between thermal stability and cycling endurance and it is successfully integrated with PCM in a 3D stackable pillar structure. SET/RESET operation are demonstrated with ～2V memory window. Selector is able to deliver 1mA ON current (7.9 MA/cm~2) and fast speed (10 ns). More than 1E12 read cycling endurance is achieved in 1S1R (OTS+PCM) device due to the excellent endurance of the selector.