Highly compact 1T-1R architecture (4F² footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting excellent NVM properties and ultra-low power operation

摘要

For the first time, nano-meter-scaled 1T-1R non-volatile memory (NVM) architecture comprising of RRAM cells built on vertical GAA nano-pillar transistors, either junction-less or junction-based, is systematically investigated. Transistors are fabricated using fully CMOS compatible technology and RRAM cells are stacked onto the tip of the nano-pillars (with a diameter down to ∼37nm) to achieve a compact 4F² footprint. In addition, through this platform, different RRAM stacks comprising CMOS friendly materials are studied, and it is found that TiN/Ni/HfO2+-Si RRAM cells show excellent switching properties in either bipolar or unipolar mode, including (1) ultra-low switching current/power: SET ∼20nA/85nW and RESET ∼200pA/700pW, (2) multi-level switchability, (3) good endurance, >10⁵, (4) satisfactory retention, 10 years at 85^oC; and (5) fast switching speed ∼50ns. Moreover, this vertical (gate-all-around) GAA nano-pillar based 1T-1R architecture provides a more direct and flexible test vehicle to verify the scalability and functionality of RRAM candidates with a dimension close to actual application.