High-linearity and variable gate-voltage swing dual-gate In{sub}0.5Ga{sub}0.5P/In{sub}0.2Ga{sub}0.8As pseudomorphic high electron mobility transistors

摘要

InGaP/InGaAs pseudomorphic high electron mobility transistors (PHEMT's) fabricated using single-gate and dual-gate methodologies have been characterized with special emphasis to precisely control the device linearity and the gate-voltage swing. The key features of the proposed PHEMT profile are characterized in a composite channel by using a GaAs delta sheet and an undoped InGaAs layer. The gate voltage dependence of tranconductance for the first equivalent gate with several V{sub}(gs2) shows that gate voltage swing available is in the range of 0 to 4.5 V.