Dual-gate In_0.5Ga_0.5P/In_0.2Ga_0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing

摘要

In_0.5Ga_0.5P/In_0.2Ga_0.8As pseudomorphic high electron mobility transistors (PHEMTs) fabricated using single-and dual-gate methodologies have been characterized with special emphasis on precisely controlling the device linearity and the gate-voltage swing. A composite channel employing a GaAs delta-doped (δ(n~+)) sheet and an undoped In_0.2Ga_0.8As layer Characterizes the key features of the proposed PHEMT profile.