首页> 外文会议>Conference on Optoelectronic and Microelectronic Materials and Devices >“You need another gate, mate”: g-factor engineering in quantum wires and wrap-gated nanowires
【24h】

“You need another gate, mate”: g-factor engineering in quantum wires and wrap-gated nanowires

机译:“您需要另一个门,配对”:量子线和包裹门纳米线中的g因子工程

获取原文

摘要

1D systems have received significant attention as possible spin-filtering elements [3,4] and for studying fundamental spin/exchange-based phenomena [5]. An important parameter in both cases is the Landé effective g-factor g*, which relates the Zeeman spin-splitting to the applied magnetic field. The g-factor sets the minimum applied field required to resolve the spin, providing incentive to maximise its value, and gives some insight into exchange effects. Despite this, little is known about how the g* of a QPC's 1D subbands evolves with electron density, and precisely how this plays into many-body effects such as the anomalous 0.7 × 2e2/h plateau, which remains an open scientific problem.
机译:一维系统作为自旋过滤元件[3,4]和研究基于自旋/交换的基本现象[5]受到了广泛的关注。在这两种情况下,一个重要参数是Landé有效g因子g *,该因子将塞曼自旋分裂与所施加的磁场相关联。 g因子设置解决自旋所需的最小应用场,从而提供激励以最大程度地发挥其价值,并深入了解交换效果。尽管如此,关于QPC的一维子带的g *如何随着电子密度变化以及如何精确地作用于多体效应(例如反常0.7×2e 2 / h高原)的知识鲜为人知,这仍然是一个开放的科学问题。

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号