We have simulated the piezoresistance coefficients (Pie Coefficients) in some certain Germanium nanowire (GeNW), Silicon nanowire (SiNW) and several Ge/Si core/shell nanowires based on the first-principles calculations. All the nanowires are with a same diameter in <111> direction and remain unsaturated on surface. In these <111> nanowires, It was found that the Pie Coefficients of the SiNW and the Ge1Si3 (Ge/Si core/shell nanowire with three layers of silicon atoms) can reach as much as 35.26 × 10−11Pa−1 and 30.0 × 10−11Pa−1 under 2.5% tension in the longitudinal direction. And all those of the GeNW and the Ge3Si1 (with only one silicon atom layer) almost kept negative values from −1 × 10−11 Pa−1 to −9 × 10−11 Pa−1, whether under compressions or tensions. However, under compressions, the Ge2Si2 (with two layers of silicon atoms surrounded outside) almost had no piezoresistive effect.
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机译：基于第一性原理计算，我们已经在某些锗纳米线（GeNW），硅纳米线（SiNW）和一些Ge / Si核/壳纳米线中模拟了压阻系数（Pie系数）。所有纳米线在<111>方向上具有相同的直径，并且在表面上保持不饱和。在这些<111>纳米线中，发现SiNW和Ge 1 Si 3 （具有三层硅的Ge / Si核/壳纳米线）的Pie系数原子）可以达到35.26×10 −11 Pa -1 和30.0×10 −11 Pa −1 在纵向方向上承受2.5％的张力。而所有的GeNW和Ge 3 Si 1 （只有一个硅原子层）几乎都保持负值-1×10 −11 Pa -1 到−9×10 −11 Pa -1 ，无论是处于压缩状态还是处于拉伸状态。但是，在压缩下，Ge 2 Si 2 （外面有两层硅原子）几乎没有压阻效应。
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