首页> 外文会议>ASME international mechanical engineering congress and exposition;IMECE2011 >PROCESS DESIGN FOR THE CONTROLABILITY OF CHEMICAL VAPOR DEPOSITION GROWN VERTICALLY ALIGNED SINGLE WALLED CARBON NANOTUBES
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PROCESS DESIGN FOR THE CONTROLABILITY OF CHEMICAL VAPOR DEPOSITION GROWN VERTICALLY ALIGNED SINGLE WALLED CARBON NANOTUBES

机译:垂直对准单壁碳纳米管生长的化学气相沉积的可控制性过程设计

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Carbon nanotubes (CNTs) have received much attention from both the scientific and industrial communities due to their structural properties and unique morphology. There has also been growing interest in vertically aligned single walled carbon nanotubes (VA-SWNTs) because of their suitability for building devices such as hydrogen storage and super capacitors. Various methods including chemical vapor deposition (CVD) have been developed for growing VA-SWNTs. Among them is alcohol catalytic CVD which is well known for its economic viability, comprehensive substrates selectivity and good yield of VA-SWNTs. In order to fully understand the growth mechanism of those CNTs, an examination of the role of inputs like hydrocarbon flow rate, reaction time, chamber temperature, and pressure is essential. This work studies the controllability of VA-SWNTs growth by a hybrid process model of an experimental design and an artificial neural network (ANN). Process analysis shows that CVD pressure and temperature are the most significant input factors. In addition, interactions and response surface plots confirm these results and add that higher temperature and pressure will yield VA-SWNTs with high probability.
机译:碳纳米管(CNTs)的结构特性和独特的形态使其备受科学界和工业界的广泛关注。由于垂直排列的单壁碳纳米管(VA-SWNT)适合用于建筑设备,例如储氢和超级电容器,因此也引起了人们越来越大的兴趣。已经开发出包括化学气相沉积(CVD)在内的各种方法来生长VA-SWNT。其中包括醇催化CVD,该醇催化CVD以其经济上的可行性,全面的底物选择性和VA-SWNTs的高产率而著称。为了完全理解这些CNT的生长机理,必须检查输入的作用,例如烃的流速,反应时间,反应室温度和压力。这项工作通过实验设计和人工神经网络(ANN)的混合过程模型研究了VA-SWNTs生长的可控性。过程分析表明,CVD压力和温度是最重要的输入因素。此外,相互作用和响应面图证实了这些结果,并补充说更高的温度和压力将更有可能产生VA-SWNT。

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