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Thermoelectric power factor enhancement in metal/semiconductor nanocomposites by ionized nanoparticie scattering

机译:电离纳米粒子散射增强金属/半导体纳米复合材料的热电功率因数

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We present a theoretical investigation of the thermoelectric power factor enhancement in metal/semiconductor nanocomposites by the energy dependent electron scattering from ionized nanoparticles. The metal nanoparticles embedded in semiconductors can be ionized to donate electrons to the matrix, which will result in a Coulomb potential tail around the nanoparticles. Here we show the significant effect of slowly varying potential tails on thermoelectric properties of the nanocomposites. The Coulomb potential is different from that of the conventional ionized impurities due to the finite size of the ionized particles, and the fact that the nanoparticles can give multiple electrons to the matrix. Detailed calculations for scattering rates and thermoelectric coefficients are presented for ErAs semi-metallic nanoparticles in inGaAs semiconductors. The partial wave method is used to consider the exact potential profile around nanoparticles and Boltzmann transport equation is used to calculate the transport coefficients. We find that an increase by 15~30% in power factor can be achieved over a wide temperature range in these material systems in addition to the thermal conductivity reduction to further enhance ZT.
机译:我们目前对金属/半导体纳米复合材料中热电功率因数的提高进行了理论研究,该研究是通过电离纳米粒子的能量依赖性电子散射实现的。嵌入半导体中的金属纳米粒子可以被电离,以将电子捐赠给基质,这将导致纳米粒子周围的库仑势尾。在这里,我们显示了缓慢变化的潜在尾巴对纳米复合材料热电性能的重大影响。库仑电势与常规电离杂质的电势不同,这是由于电离粒子的尺寸有限,以及纳米粒子可以为基质提供多个电子这一事实。介绍了inGaAs半导体中ErAs半金属纳米粒子的散射速率和热电系数的详细计算。分波法用于考虑纳米粒子周围的精确电势分布,玻耳兹曼输运方程式用于计算输运系数。我们发现,在这些材料系统中,除了降低导热系数以进一步增强ZT之外,还可以在较宽的温度范围内将功率因数提高15%至30%。

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