Inorganic/organic hybrid light-emitting diodes (LEDs) (IO-HyLEDs) composed of p-type GaN-type Tris-(8-hydoroxyquinoline) aluminum (Alq_3) were fabricated with and without thin MgO electron-blocking layer (EBL) at the inorganic/organic interface. These LEDs showed clear and stable current rectifying diode characteristics and electroluminescence (EL) peaked at UV region at room temperature. For the sample with MgO-EBL, obvious enhancement of green emission from Alq_3 layer was observed. This result suggests that due to effective suppression of electron transport from Alq_3 to p-GaN by MgO-EBL, radiative recombination of electrons and holes in Alq_3 layer was enhanced. It was indicated that the band engineering technique can be applied to control the emission property of inorganic/organic hybrid LED.
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