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Theoretical investigation of the adsorption of NH_3 on B-doped graphene

机译:硼掺杂石墨烯对NH_3吸附的理论研究

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The geometrical structures, the electronic structures, and the NH_3 adsorption properties of pure and B-doped graphene have been investigated using density-functional theory. The density of states (DOS) of pure and B-doped graphene, the adsorption configurations and the adsorption energies of NH_3 adsorbed on pure and B-doped graphene, and the charge transfer between NH_3 and B-doped graphene have been calculated in details. The results indicate that boron doping can enhance the DOS at the Fermi level and slightly enhance the physical adsorption of NH_3 on the surface of graphene. Furthermore, the doping of boron can result in the charge redistribution of graphene, which can induce the charge transfer between NH_3 and graphene and change the transport properties of graphene.
机译:使用密度函数理论研究了几何结构,电子结构和NH_3对纯和B掺杂石墨烯的吸附性能。纯和B掺杂石墨烯的状态(DOS)的密度,吸附配置和吸附在纯和B掺杂石墨烯上的NH_3的吸附能量以及NH_3和B掺杂石墨烯的电荷转移已经详细计算。结果表明,硼掺杂可以增强FERMI水平的DOS,并略微增强NH_3在石墨烯表面上的物理吸附。此外,硼的掺杂可以导致石墨烯的电荷再分布,这可以诱导NH_3和石墨烯之间的电荷转移,并改变石墨烯的运输性能。

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