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Crystalline Alignment and In-plane Texture Improvement of Buffer Layers Deposited on NiW Tapes

机译:沉积在NiW磁带上的缓冲层的晶体取向和面内纹理改进

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In order to deposit YBCO coated conductor with high critical current densities on rolling assisted biaxially textured Ni-W tapes, this paper has systematically studied the influence of deposition conditions on the orientation, in-plane texture and surface morphology of buffers and superconducting layers. It was found that the crystalline alignment and the in-plane texture of cerium oxide cap-layers were well improved by optimizing deposition parameters. The full width at half maximum of phi-scan x-ray diffraction peaks were reduced from original values of 7-8 degrees to 5-6 degrees. A high critical current density of 4.6×10~6 A/cm~2 has been achieved on optimized buffer layers. This value is comparable with the critical current density of YBCO thin films deposited on single crystalline substrates.
机译:为了将高临界电流密度的YBCO涂层导体沉积在轧制辅助双轴织构Ni-W胶带上,本文系统地研究了沉积条件对缓冲层和超导层的取向,面内织构和表面形态的影响。发现通过优化沉积参数可以很好地改善氧化铈覆盖层的晶体取向和面内织构。 phi-scan x射线衍射峰的半峰全宽从原来的7-8度减小到5-6度。在优化的缓冲层上已实现了4.6×10〜6 A / cm〜2的高临界电流密度。该值可与沉积在单晶衬底上的YBCO薄膜的临界电流密度相媲美。

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