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Study on the Effect of ZnO Buffer Layer Thickness on the Properties of MgZnO Film

机译:ZnO缓冲层厚度对MgZnO薄膜性能影响的研究

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MgZnO thin films with different thickness ZnO buffer layer were grown on c-sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The crystal qualities, surface morphologies and optical properties of MgZnO films were investigated by X-ray diffraction (XRD), atomic force microscope (AFM) and photoluminescence (PL) spectrum. The results showed that the thickness of ZnO buffer layer has important effect on the quality of MgZnO thin films. The MgZnO thin film with 20nm-thickness ZnO buffer layer showed the excellent crystal-quality, optical properties.
机译:通过金属有机化学气相沉积(MOCVD)在c蓝宝石衬底上生长具有不同厚度ZnO缓冲层的MgZnO薄膜。通过X射线衍射(XRD),原子力显微镜(AFM)和光致发光(PL)光谱研究了MgZnO薄膜的晶体质量,表面形貌和光学性能。结果表明,ZnO缓冲层的厚度对MgZnO薄膜的质量有重要影响。厚度为20nm的ZnO缓冲层的MgZnO薄膜具有优异的晶体质量和光学性能。

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