Modeling of artifacts at the current-voltage characteristics of the resonant tunneling diode

摘要

The method of accounting of artifacts at I-V characteristics of a resonant tunneling diode (RTD) was proposed within envelope function formalism. The idea of a method is to introduce a “virtual” reservoir that can emit an electron through a definite barrier to the emitter quantum well (EQW), from which electrons can tunnel through the main quantum well (MQW) through the whole quantum region.