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Size-dependent recombination dynamics in ZnO nanowires

机译:ZnO纳米线中尺寸依赖的重组动力学

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One-dimensional nanostructures such as nanowires (NWs) have attracted much attention due to their unique properties. The reduction in size leads to novel electrical, mechanical, chemical, and optical properties. NWs are also expected to be important functional units for optoelectronic nanoscale applications, when being integrated in nanodevices. Zinc oxide (ZnO) is a semiconductor material of great importance for optoelectronics due to its wide direct band-gap of 3.37 eV and its extremely large exciton binding energy of 60 meV. Therefore, ZnO NWs have great potential for an advantageous use in devices. In this respect, it is crucial to have detailed information about the recombination dynamics of the ZnO NWs and their dependence on wire dimensions. In this work, the influence of finite-size on the recombination dynamics of the neutral donor-bound exciton (DX) around 3.365 eV has been investigated for single-crystal ZnO NWs with different diameters grown on SiO2/Si substrates by the vapor transport method using Au as catalyst. We demonstrate that the lifetime of this excitonic transition decreases with increasing the surface-to-volume ratio due to a surface induced recombination process. Furthermore, we have observed two broad transitions around 3.341 eV (S1) and 3.314 eV (S2) whose intensity increases for the smaller NWs diameters [1]. In order to study their origin we have investigated the temperature dependence of their photoluminescence (PL) intensity as well as their thermal activation energy. Comparing their intensities and recombination times to those of the main excitonic recombination around 3.365 eV we conclude that S1 and S2 might originate from surface states. We observed that the diameters as well as the length of the NWs determine the lifetime of the neutral donor bound excitons. Our findings suggest that while the length is mainly responsible for different mode quality factors of the cavity-like NWs, the diameter determines the influence of --surface states as alternative recombination channels for the optical modes trapped in the nanocavity [2]. These results are of great interest for a precise design of ZnO-based nanostructures, since they represent a step toward a deep understanding of its size-dependent recombination dynamics.
机译:一维纳米结构(如纳米线(NWs))因其独特的性能而备受关注。尺寸的减小导致新颖的电,机械,化学和光学性质。当将NW集成到纳米器件中时,它们也有望成为光电纳米级应用的重要功能单元。氧化锌(ZnO)由于具有3.37 eV的宽直接带隙和60 meV的非常大的激子结合能,因此对于光电子学来说是至关重要的半导体材料。因此,ZnO NW具有在器件中有利使用的巨大潜力。在这方面,至关重要的是要获得有关ZnO NW的重组动力学及其对导线尺寸的依赖性的详细信息。在这项工作中,对于在SiO 2 上生长的不同直径的单晶ZnO NW,研究了有限尺寸对约3.365 eV的中性施主结合激子(DX)重组动力学的影响。通过使用Au作为催化剂的气相传输法制备/ Si衬底。我们证明,由于表面诱导的重组过程,该激子跃迁的寿命随着表面体积比的增加而降低。此外,我们观察到了在3.341 eV(S1)和3.314 eV(S2)附近的两个宽跃迁,它们的强度随着较小的NWs直径而增加[1]。为了研究它们的起源,我们研究了它们的光致发光(PL)强度及其热活化能的温度依赖性。将它们的强度和重组时间与大约3.365 eV的主要激子复合的强度和重组时间进行比较,我们得出结论,S1和S2可能源自表面状态。我们观察到,NW的直径和长度决定了中性供体结合的激子的寿命。我们的研究结果表明,尽管长度主要是导致腔状NW的不同模式品质因数的原因,但直径决定了- -- 表面状态作为纳米腔中捕获的光学模式的替代复合通道[2]。这些结果对于基于ZnO的纳米结构的精确设计非常感兴趣,因为它们代表了对深入了解其尺寸依赖性重组动力学的一步。

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