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Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory

机译：由Mott绝缘子AM4X8中的电场驱动的电阻开关（A = Ga，Ge; M = V，Nb，Ta; X = S，Se）：迈向新型的非易失性RRAM存储器

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《2011 3rd IEEE International Memory Workshop》|2011年|p.1-4|共4页
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Souchier E.; Vaju C.; Guiot V.; Corraze B.; Janod E.; Tranchant J.; Mazoyer P.; Besland M.-P.; Cario L.;
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机译：Mott绝缘子系列中的电场感应阻性开关：迈向新型RRAM存储器
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机译：相关绝缘子中的场驱动Mott间隙塌陷和电阻开关
6. Electric-pulse-induced Resistive Switching And Possible Superconductivity In The Mott Insulator Gata_4se_8 [J] . C. Vaju, L. Cario, B. Corraze, Microelectronic Engineering . 2008,第12期

机译：Mott绝缘子Gata_4se_8中的电脉冲感应阻变和可能的超导性
7. Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory [C] . Souchier E., Vaju C., Guiot V., IEEE International Memory Workshop . 2011

机译：电场由电场驱动的电场在Mott Insululators AM4X8（A = Ge，Ge; M = V，Nb，Ta; x = s，se）：朝着一类新的非易失性RRAM记忆
8. Fast transients in non-volatile resistive memories (RRAM) using tantalum pentoxide as solid electrolyte. [D] . Shrestha, Pragya Rasmi. 2013

机译：使用五氧化二钽作为固体电解质的非易失性电阻存储器（RRAM）中的快速瞬变。
9. Field-driven Mott gap collapse and resistive switch in correlated insulators [O] . G. Mazza, A. Amaricci, M. Capone, -1

机译：相关绝缘子中的场驱动Mott间隙塌陷和电阻开关
10. Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories [O] . Cario, Laurent, Vaju, Cristian, Corraze, Benoit, 2013

机译：莫特系列中的电场感应电阻切换绝缘体：朝向非易失性mott-RRam存储器

Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory

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