Spin injection into semiconductor is expected to provide new functionalities of electronic devices as a candidate of beyond CMOS technology. By using a long spin lifetime predicted in Si, new logic devices such as spin MOSFET have been proposed. Many groups have reported electrical spin injection and detection in Si by non-local (NL) magnetoresistance (MR) measurement using a lateral spin valve structure. Recently, we have demonstrated electrical spin injection and detection in highly doped Si by proving consistency among several experimental results. Spin injection and detection at room temperature is inevitable to realize device applications. Dash and Jansen et al. have reported room temperature spin injection into Si by Hanle precession measurement in three-terminal (3T) geometry. In this method, a single magnetic contact is used, and spin current is injected and detected by the same magnetic contact. They found that the huge spin accumulation was induced in the vicinity of the tunnel barrier and Si interface.
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