Spin injection and filtering effects in Fe/Semiconductor junctions

摘要

We have calculated the spin polarization of the tunnel conductivity for Fe/GaAs and Fe/GaAs/Fe junctions using a full-orbital tight-binding model, and have showed that the interface resonant states within the Schottky barrier in the GaAs layer influence significantly the spin-dependent tunneling across the interface. The results account well for the several experimental results. Acknowledgements