Development of silicon-based-spintronic devices

摘要

To promote coupling of 'spintronics' and 'the silicon technology', we are focusing on a highly effective spin-injection into a silicon-based device with the short-term concrete aims of Development of silicon-based ferromagnets, Demonstration of the spin-injection in ferromagnetic metal/silicon heterostructures. In this contribution, we first show our recent results on silicon carbide (SiC)-based ferromagnets. Among the IV-group semiconductors, SiC is a promising material for power electronics due to the useful fundamental properties, such as the wide band gap and the high breakdown electric field [1]. Secondly the fabrication of Fe_3Si/CaF_2/Si epitaxial heterostructures is demonstrated. Fe_3Si has a lattice parameter of 0.564 nm, which is nearly lattice matched to Si. The Fe_3Si heterostructure will be the promising candidate as the spin-polarized electron source.