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Low Active Power High Speed Cache Design

机译:低有功功率高速缓存设计

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摘要

The active power is one of the major contributors to the total power consumption in the SRAM cell. It consists mainly of two components -- write power and read power. These power dissipations occur due to charging/discharging of large bit line capacitance. On-chip cache size has become increasingly important for high performance applications, and it now presents more of a limit to microprocessor speed than clock rate. The models and methodologies for the design of SRAM, an integral component of microprocessor cache, have changed with time. Presently, continued scaling is threatened by variability in SRAM performance and function. This work addresses the emerging threat of variability keeping active power consumption and speed of operation in consideration.
机译:有功功率是导致SRAM单元总功耗的主要因素之一。它主要由两个部分组成-写入功率和读取功率。这些功耗是由于大位线电容的充电/放电而发生的。片上缓存的大小对于高性能应用已经变得越来越重要,并且现在它对微处理器速度的限制比对时钟速率的限制更大。 SRAM(微处理器缓存的组成部分)的设计模型和方法随着时间而改变。目前,SRAM性能和功能的可变性威胁着继续扩展。这项工作解决了新出现的可变性威胁,同时考虑了有效功耗和操作速度。

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