首页> 外文会议>2011 IEEE Compound Semiconductor Integrated Circuit Symposium : Integrated Circuits in GaAs, InP, SiGe, GaN and Other compound Semiconductors : Technical Digest 2011 >Waveform Engineering beyond the Safe Operating Region: Fully Active Harmonic Load Pull Measurements under Pulsed Conditions
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Waveform Engineering beyond the Safe Operating Region: Fully Active Harmonic Load Pull Measurements under Pulsed Conditions

机译:超出安全工作区域的波形工程:脉冲条件下的完全有源谐波负载牵引测量

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摘要

It is often desirable to measure device characteristics under non-continuous operation, perhaps to better simulate actual operating conditions, to reduce the thermal loading or to investigate RF operation going beyond the CW safe operating region. In this paper a measurement solution is presented that allows for the concept of experimental RF waveform engineering to be undertaken under such conditions. The system is demonstrated by using it to investigate the feasibility of operating GaAs based HEMT technology under pulsed conditions in high efficiency modes that required high RF voltage swings that extend beyond their rated CW safe operating region.
机译:通常需要在非连续操作下测量设备特性,以更好地模拟实际操作条件,减少热负荷或研究超出CW安全操作范围的RF操作。在本文中,提出了一种测量解决方案,该解决方案允许在这种条件下进行实验性RF波形工程的概念。通过使用该系统来研究该系统,以研究在脉冲条件下以高效率模式运行基于GaAs的HEMT技术的可行性,该模式要求高RF电压摆幅超出其额定CW安全工作范围。

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