Theoretical study of the resistance switching mechanism in rutile TiO2−x for ReRAM: The role of oxygen vacancies and hydrogen impurities

摘要

We study the resistance switching mechanism of rutile TiO2 using ab initio calculations based on DFT. Ordering of the oxygen vacancies substantially increases the conductivity of TiO2 by forming a conductive channel, i.e. “ON”-state. We find that the diffusion of either oxygen or hydrogen atoms into the conductive channel causes the rupture of the conductive filament resulting in the transition from “ON”-state to “OFF”-state.